Investigation of Temperature Characteristics for 1.3-¿m InAs Quantum Dot VCSELs with Planar Electrodes Configuration

Y Ding,D H Zhang,C Z Tong,L J Zhao,S F Yoon,W J Fan,D S Li,W Wang,B S Ma,D W Xu

doi:10.1109/ipgc.2008.4781490

Investigation of Temperature Characteristics for 1.3-¿m InAs Quantum Dot VCSELs with Planar Electrodes Configuration

Y Ding, D H Zhang + Show 8 more

https://doi.org/10.1109/ipgc.2008.4781490

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Publication Date: Dec 1, 2008

Citations: 8

Affiliation: Nanyang Technological University, Institute of Semiconductors

#Vertical Cavity Surface Emitting Lasers #Oxide Aperture Sizes + Show 8 more

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Abstract

The 1.3 mum InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar electrodes configuration were fabricated. The lasing wavelength is around 1273 nm. The typical threshold current is lower than 6 mA. The output power of 0.9 mW with slope efficiency of 0.13 W/A has been recorded. Temperature dependence of the L-I-V relationship of InAs QD VCSELs was investigated. High temperature stability can be achieved with the temperature from 15degC to 50degC. The comparison of temperature characteristics of InAs QD VCSEls with two different oxide aperture sizes indicates the small oxide aperture leads to the more preferable temperature insensitivity.

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