Abstract
This paper reports the importance of PbO/TeO2 ratio in the formation of Ag2Te, which is responsible for increasing the reformed glass conductivity after sintering. The presence of Ag2Te, a degenerate semiconductor, seen in the Raman Spectra, after HNO3 etching of the gridline and its absence in the HF etched counterpart, supports this assertion. Thus, the increase glass conductivity after sintering has the potential of enabling formation of high quality contacts to emitter with high sheet resistance.
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