Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

Abstract

The experimental and simulated switching behavior across the negative differential resistance (NDR) region of GaN/AlN double-barrier resonant tunneling diodes (RTDs) is presented. The shortest 10%–90% experimental switching time was ~55 ps. The experimental results are also studied with P-SPICE circuit models, which show that the relatively low peak-to-valley current ratio (~1.5), relatively high specific contact resistance ( $\geq \textsf {1}\times \textsf {10}^{-\textsf {6}}\,\,\Omega $ -cm2), and relatively large specific capacitance limit the switching time.