Abstract
The surge reliability of the body diode of 1200V planar SiC MOSFET and trench SiC MOFET is experimentally compared and analyzed in this paper. Two different failure modes of SiC MOSFET are reported and the physical mechanism of the failure is analyzed in detail. The maximum surge current and power density of planar SiC MOSFET is larger than trench SiC MOSFET. The planar MOSFET failed with a shortage between gate and source while the three terminals of trench MOSFET are shorted together after 112A surge current test. The analysis illustrates the failure of planar MOSFET may be associated with the interface traps and gate oxide traps above the channel while trench MOSFET failed due to thermal breakdown.
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