Abstract
Herein, we have investigated the optical and microwave dielectric properties of Bi0.5Na0.5TiO3 (BNT) thin films grown under different oxygen pressure (PO2) using the pulsed laser deposition technique. The X-ray diffraction measurements confirm the single phase of BNT and the secondary phase and a further reduction in the secondary phase and increase in the BNT phase with PO2, which signifies the close relationship between the crystal structure and oxygen content. The shift of Raman-active TO1, TO2, and TO3 modes towards higher wavelengths and increase in mode intensity with PO2 indicating the degree of the film of crystallinity. The local roughness (αloc) of all films obtained as ∼ 0.85 and the interface width (ω) and lateral correlation length (ξ) of films vary with PO2. Also, the films exhibit an increase in refractive index and reduction in the optical bandgap due to improvement in crystallinity and reduction in the oxygen vacancies. The microwave dielectric properties show that a strong PO2 depends on the higher dielectric constant (εr = 336) with lower loss (tanδ = 0.0093) at 5 GHz, which shows the potential applications in high-frequency devices.
Highlights
The study of Ferroelectric perovskite oxides in condensed matter research has renewed enamours scientific interest owing to their technological applications such as capacitors with tunable capacitance, ferroelectric non-volatile dynamic random-access memory (DRAM), radio-frequency identification (RFID) cards, piezoelectric sensors and actuators, and pyroelectric devices, etc. [1,2,3,4]
There are limited studies available involving with microwave dielectric properties of BNT films, which suggested to study the influence of O2 partial pressure on microwave dielectric properties of BNT thin films systematically
Figure. 1(a-d) illustrates the X-ray diffraction (XRD) patterns of BNT thin films deposited on a quartz substrate at various oxygen (O2) pressures from 1 Pa to 50 Pa
Summary
The study of Ferroelectric perovskite oxides in condensed matter research has renewed enamours scientific interest owing to their technological applications such as capacitors with tunable capacitance, ferroelectric non-volatile dynamic random-access memory (DRAM), radio-frequency identification (RFID) cards, piezoelectric sensors and actuators, and pyroelectric devices, etc. [1,2,3,4]. The rapid progress in the BNT and its solid solutions was identified them as high-performance lead-free ferroelectric and piezoelectric materials It was firstly discovered by Smolenskii et al, is an ABO3 complex perovskite-structured material with random distribution of Bi+3 and Na+ ions at A-site [17]. [23,24,25] the underlying benefits of PLD motivated us to deposit complex oxide BNT films with an excess of Bi and Na with 5 mol % and to investigate the effect of oxygen partial pressure on structural, morphological, optical and electric properties systematically. There are no reports available on the growth mechanism of PLD deposited BNT films using scaling theory and is motivated to pursue this study. The surface scaling studies of deposited BNT thin films by PLD as a function of oxygen partial pressure are investigated in detail. There are limited studies available involving with microwave dielectric properties of BNT films, which suggested to study the influence of O2 partial pressure on microwave dielectric properties of BNT thin films systematically
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