Investigation of Substitution of Cu and Se Atoms on the Electronic and Magnetic Properties of GaN Monolayer Nanosheet

Abstract

In this paper, some of the electronic properties of GaN monolayer nanosheet are investigated in its pure form and after substitution of Cu and Se atoms. Electronic properties have been calculated based on the density functional theory approach with full-potential linearized augmented plane wave method. The results show that GaN nanosheet is a nonmagnetic semiconductor and its energy gap is equal to 2.202 eV. Our results show that GaN nanosheet properties vary with substitution of Cu or Se atoms: GaSeN and GaCuN show half-metallic and metallic behaviors, respectively. Calculated magnetic moments for GaSeN and GaCuN are 1.00 and 1.127 µB, respectively.