Abstract
Raman scattering analysis revealed that the structure of carbon (C) films prepared by pulsed laser deposition at room temperature is predominantly amorphous and the structure of amorphous C nitride (a-CN x ) films can be changed with varying substrate temperatures (ST) from 20 to 500 °C. The deposited a-CN x films are composed of C-N, C-N and C-O bonded materials and the C-N and C=N bonds are increased with ST. We have found no other obvious peaks can be distinguished in the range 900 to 2300 cm−1 in which several peaks always appear in a-CN x films. The spectra were deconvoluted into Raman D and G peaks and the structural parameters are determined. The upward shifts of Raman G peak towards 1592 cm−1 shows the evidence of a progressive formation of crystallites in a-CN x films upon increase of ST. While, the upward shifts of Raman D peak towards 1397 cm−1 have been related to the decreased of bond-angle disorder and sp3 tetrahedral bonding in its structure. Raman FWHM and IDIG also indicate that N incorporation with increased of ST caused an increase in the number and/or size of graphitic domains in the a-CN x films.
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