Investigation of Structural Parameters Impact on Sensitivity of InP/InGaAs/InP Channel Double Gate MOSFET for Biosensing Application

Abstract

A simulation-based study of sensitivity parameters of hetero (InP/InGaAs/InP) channel with source-side cavity double gate MOSFET (H-SCDG MOSFET) to detect the label-free biomolecules like uricase (K=1.54), streptavidin (K=2.10), ferrocytochrome C (K=4.7), and protein (K=8) has been done. A nanogap cavity is embedded beneath the gate oxide segment to trap the bio-targets, which gives the deviation in threshold voltage. By incorporating the dielectric modulation method, the sensitivity analysis has been done with the variation in structural parameters of the device. The impact of sensitivity with a variation of cavity length (Lcavity) and oxide thickness (tox) is also examined. The ample performance of H-SCDG MOSFET has been extensively studied by using the 2D TCAD platform. It is observed that the protein biomolecule shows the value of sensitivity, on current sensitivity and subthreshold swing sensitivity as 0.53, 1.75, and 0.96, respectively, with Lcavity=15nm and tox=1nm.