Investigation of structural network and mechanical properties of Titanium silicon nitride (TiSiN) thin films

Abstract

Titanium silicon nitride (TiSiN) thin films were deposited on p-type c-Si (100) with different N2 flow rate by using chemical vapor deposition (CVD) technique. The microstructure, phonon modes, mechanical properties and compositional study of TiSiN thin films were characterised by scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy, nanoindentation and X-ray photoelectron spectroscopy (XPS),respectively. The SEM images show increases in surface roughness with increasing of N2 flow rate, however, improves the hardness and Young's modulus of TiSiN thin film. The XRD analysis reveals the presence of strain in TiSiN films. The estimated crystallites of TiSiN thin films was 7.51 and 7.39 nm for 40 and 100 sccm N2 flow rate. The XPS reveals the presence of 20 at. % Si content at 40 sccm N2 flow rate in the TiSiN film. To analyse the broad Raman spectra of TiSiN thin films, the peaks were convoluted into six individual Gaussian peaks. The quantitative and qualitative analysis XPS and Raman spectra of TiSiN thin films were carried out by using Origin 9.0 software.