Abstract
This article examines the temperature-dependent conduction mechanism in graphene oxide (GO) and thick reduced graphene oxide (rGO) film. The mild oxidation method is used for GO synthesis which is then chemically reduced to obtain rGO and characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The different characterization results exhibit substantiate eloquent structural changes while reducing m-rGO to rm-rGO. The charge transport behaviour in GO and rGO film is investigated in the temperature range 16K to 400 K. The result depicts overall increase in conductivity in rGO owing to reduction in functional groups. The electrical conductivity of GO shows crossover from Efros-Shklovskii (ES) variable range hopping (VRH) to Mott VRH in the temperature range 100K-40K to 40K-16K. For rGO ES-VRH conduction is seen in the temperature range of 100K to 40K. The high conductivity of rGO in comparison to GO is todays demand for direct applications in electronic devices.
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