Abstract
In the present study, different molar ratios of (1:0, 0:1, 3:1, 1:1, and 1:3) NiO:CdO composite thin films were coated on p-Si by a dynamic sol-gel spin coating method. Structural characterizations of NiO:CdO thin films were performed by XRD, FE-SEM, and EDX analysis. The photoresponse and electrical behavior of the fabricated photodiodes were determined by current-voltage (I–V), transient photocurrent-time (I–t), capacitance-voltage (C–V), conductivity-voltage (G-V), and transient photocapacitance-time (C–t) measurements. All fabricated photodiodes were exhibited rectifying properties and the photocurrent values increased as the light intensity was increased. All photodiodes are sensitive to light and it was determined that the NiO photodiode exhibited the highest photosensitivity value. Photocapacitance and photoconductance values of photodiodes were affected by light. Photoresponse and electrical behavior were affected by the interface states and the NiO:CdO ratio. The results show that Al/NiO:CdO/p-Si/Al photodiodes can be used as photosensors or photocapacitors in optoelectronic applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
