Abstract
Conventional H/H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and poly H/H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Reaction-Diffusion (RD) models are compared, and the poly version is explored as a more physically likely model for predicting interface trap (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">IT</sub> ) generation during Negative Bias Temperature Instability (NBTI) in p-MOSFETs. Stochastic implementations of the conventional H/H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> RD model and the poly H/H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> RD model are realized, and their equivalence to continuum implementations are investigated for large area devices. Impact of dimensionality (1D, 2D, 3D) and device size (W, L) are explored for stochastic implementation. Stochastic simulations for small area devices using the poly H/H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> RD model show long term 1/6 power law time exponent during stress. A comprehensive framework consisting of H/H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> RD model for N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">IT</sub> along with empirical models for hole trapping (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">HT</sub> ) and bulk trap generation (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OT</sub> ) is able to predict experimental data for a wide variety of large area devices for different experimental conditions. Variation of small area device degradation has been simulated and compared to experimental results.
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