Abstract
Injecting spin current from ferromagnetic metals into two-dimensional (2D) transition-metal dichalcogenide semiconductors is expected to trigger a revolution in the next generation of energy-efficient spintronic and valleytronic devices. By investigating the spin transport properties in perpendicularly magnetized ${\mathrm{Mo}\mathrm{S}}_{2}/\mathrm{Pt}/[\mathrm{Co}/\mathrm{Ni}{]}_{2}$ and ${\mathrm{Mo}\mathrm{S}}_{2}/\mathrm{Pt}/\mathrm{Ni}/[\mathrm{Co}/\mathrm{Ni}{]}_{2}$ heterostructures, here we demonstrate a strong and controllable spin injection into the 2D ${\mathrm{Mo}\mathrm{S}}_{2}$ layer through a nonmagnetic $\mathrm{Pt}$ layer. Based on optical dynamic measurements, noticeable changes in the magnetic damping constant show that the spin injection intensity can be controlled by the $\mathrm{Pt}$ layer thickness. The improved spin mixing conductance of the interface is much higher than those reported in $\mathrm{Pt}/\mathrm{Ni}$/permalloy (Py) systems with in-plane magnetic anisotropy. Our results shed lights on the development of next-generation low-power spintronic devices employing both perpendicular magnetic anisotropy and 2D material.
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