Abstract
Spin-on dopant technique has been investigated in the paper. The boron and phosphorus were used as p- and n-type dopant sources and were deposited on silicon substrates, followed by the baking process to evaporate the solvents from spin-on dopant layers. The standard drive-in process was applied to diffuse and activate the dopants. The curing temperature varied from 150 to 200 oC to investigate the temperature effect on dopant activation. It is suggested that for our selected spin-on dopant sources, the curing temperature and time of 175 oC and 60 minutes would lead to the best result of dopant activation during drive-in process, evidenced by the lowest sheet resistance, which was measured using four-point probe measurement method. 
Highlights
Silicon has been the miracle material for the electronics industry that drives the digital revolution
The huge infrastructure of the global Si electronics industry is expected to benefit the fabrication of highly sophisticated Si photonic devices at the costs that are lower than those currently required for compound semiconductors
At curing temperature of 175 oC, as the curing time increases from 20 to 60 minutes, the similar sheet resistance decrease was observed, ranging from 17.6 to 12.2 Ω/□. Compared with those at 150 oC, the much lower sheet resistance was obtained. This implies that curing temperature plays an important role for dopant activation: the higher curing temperature could effectively activate more boron dopants
Summary
Silicon has been the miracle material for the electronics industry that drives the digital revolution. The rapid “Moore’s law” miniaturization of device sizes has yielded an ever-increasing density of fast components integrated on Si chips, pushing down feature size close to its ultimate physical limits. There has been a parallel effort to broaden the reach of Si technology by expanding its functionalities well beyond electronics. The huge infrastructure of the global Si electronics industry is expected to benefit the fabrication of highly sophisticated Si photonic devices at the costs that are lower than those currently required for compound semiconductors. Si-based optoelectronic devices make possible the monolithic integration of photonic devices with high-speed Si electronics, thereby enabling an oncoming Si based optoelectronic revolution
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