Abstract
Based on the substrate integrated waveguide (SIW) technology, the influence of SIW cavity on phase noise of W-band oscillator is studied and a novel W-band low phase noise GaAs Gunn planar harmonic oscillator is developed in this letter. The technique of harmonic extraction from Gunn diodes and the novel SIW cavity structure with short piston, which is introduced to study the influence of SIW cavity on phase noise of oscillator, are discussed in detail. Because of the high quality factor and planar structure of the SIW cavity resonator, the oscillator is characterized by some advantages such as low phase noise, small size, low cost and planar integration. The optimal phase noise is −105.81 dBc/Hz at 1 MHz offset 92.16 GHz carrier frequency and the measured output power is more than 6.2 dBm. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1239–1242, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26002
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