Investigation of single-event charge collection from angled ion strikes

Abstract

Single-event upsets (SEUs) are a major concern for dynamic random access memory (DRAM) and static random access memory (SRAM) installed in space-based satellites. Recently, large-scale integration of memory devices has made them even more susceptible to multiple-bit upsets (MBUs). MBU generally results when an ion strike passes through, or interferes with, multiple memory cells at the same time. However, the fundamental processes behind MBU have not yet been fully clarified. In order to investigate the mechanism of MBU, we examined the relationship between the amount of the collected charge and the angle of the incident ion to the test device.