Abstract
The self-organized formation of single domain Au silicide nanowires is observed on Si(110). These nanowires are analysed using scanning tunnelling microscopy (STM) and spectroscopy (STS) as well as photoemission spectroscopy (PES). Core-level PES is utilised to confirm the formation of Au silicide and establish its presence as the top most surface structure, i.e., the nanowires. The growth of the Au silicide nanowires and their dimensions are studied by STM. They form for Au coverages of about 1 monolayer and are characterized by widths of about 2 to 3 nm and heights below 1 nm while reaching lengths exceeding 500 nm when choosing appropriate annealing temperatures. Valence band PES and STS indicate a small but finite density of states at the Fermi level typical for compound metals.
Highlights
The Au–Si material system has drawn interest since decades, but showed new enticing results in recent years
We study the formation of Au silicide nanowires on Si(110) substrates
The Si(110) substrate is briefly described before the Au silicide nanowires are introduced and some of their properties discussed in more detail subsequently
Summary
The Au–Si material system has drawn interest since decades, but showed new enticing results in recent years. The Au–Si phase diagram is of simple eutectic nature without any stable solid Au s ilicide[1] This property is utilised for the growth of pure Si nanowires in vapour–liquid–solid epitaxy, in which Au droplets are used as nucleation centres[2]. The narrow nanowires with widths of about only 2 to 3 nm form single domain arrays and have high aspect ratios only limited by the substrate miscut when high enough annealing temperatures up to 750 ◦C are utilised during their preparation. They show a small but finite density of states at the Fermi level typical for metallic compounds and are stable for days at room temperature
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