Abstract
GaPO4 crystals have been grown by a spontaneous nucleation method and the top-seeded solution growth method using three different solvents, 3MoO3-Li2O, 3MoO3-K2O and 2KPO3-5MoO3-3LiF. All of the as-grown crystals were characterized by means of X-ray powder diffraction. The results show that all the crystals were well crystallized and belong to the point group 32, and 2KPO3-5MoO3-3LiF flux is the best for nucleation and growth of transparent GaPO4 crystals. The infrared spectrum of GaPO4 single crystal obtained by the flux method shows that there is no incorporation of OH groups during the crystallization, which is beneficial for high temperature piezoelectric applications.
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