Abstract
The cleaved and $(2\ifmmode\times\else\texttimes\fi{}1)$ reconstructed (111) surface of p-type Si is investigated by scanning tunneling microscopy (STM). Single B acceptors are identified due to their characteristic voltage-dependent contrast, which is explained by a local energetic shift of the electronic density of states caused by the Coulomb potential of the negatively charged acceptor. In addition, detailed analysis of the STM images shows that apparently one orbital is missing at the B site at sample voltages of 0.4 -- 0.6 V, corresponding to the absence of a localized dangling-bond state. Scanning tunneling spectroscopy (STS) confirms a strongly altered density of states at the B atom due to the different electronic structure of B compared to Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
