Abstract
The influence of the electric parameters of compensating sulfur and rhodium impurities on the photosensitivity of p-type silicon is discussed in the present paper. Conditions of the increased photosensitivity ofSi andSi in the near-IR region of the spectrum are defined. The increase of the photosensitivity of compensated silicon at 300 K is found to be due to a higher degree of microinhomogeneity in the resistivity (with a simultaneous increase in the degree of compensation) irrespective of the electric parameters of the compensating impurity in silicon.
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