Abstract
Various kinds of as-chemically etched and heat-treated Si surfaces have been investigated by means of optically stimulated electron spin resonance (ESR) method. It is clarified that HNO 3 containing etchant is not necessary to obtain the photoinduced ESR lines. Their intensity is enhanced by the heat treatment in wet ambient in contrast to the results obtained by Caplan et al. It is found that the paramagnetic centers attributable to the photoinduced lines are created by the reaction of water or hydrogen with the very thin surface film on silicon substrates.
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