Abstract
After extensive utilisation of tantalum (Ta) catalyst filaments for hot wire chemical vapor deposition (HWCVD) of thin silicon films a strong degradation takes place. A high concentration of silicon was found not only on the surface but also in the bulk of the tantalum filament. Visual microscopic investigations, Secondary Ion Mass Spectrometry (SIMS), X-ray Diffraction (XRD) and Energy Dispersive X-ray Analysis (EDX) indicate appearance of various silicides and formation of thick silicon layer (> 50 μm) on the filament surface. The high-power backscattered scanning electron microscopy (SEM BSE) and optical microscopic analysis of the filament cross section reveal a complicated, non-uniform structure of filaments after use. By XRD a recrystallisation of tantalum kernel was detected. The EDX analysis indicates that silicides on the filament surface have the highest concentration of Si.
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