Investigation of SiC and C Nanostructures Obtained by MWCVD

B Mansurov,U Koztayeva,B Medyanova,G Partizan,B Aliyev,G Suyundykova,M Mansurova,B Zhumadilov,A Kenzhegulov

doi:10.18321/ectj648

Abstract

The results of experiments on the synthesis of SiC and C nanostructures by chemical vapor deposition in microwave plasma are presented in this article. The single crystal silicon plates with orientations [100] and [111] which previously passed chemical purification were used as substrates. Also, the substrates of porous silicon were prepared in order to activate the surface during the synthesis. The synthesis temperature ranged from 700 to 900 °C in steps of 100 °C. The pressure in the chamber was changed depending on the power of the plasma. Studies by scanning electron microscopy (SEM) showed that formed nanostructures have a diameter of 200‒350 nm and a rough surface. The formation of nanostructures on the polished Si occurs on the SiC buffer layer. Analysis of SEM images of the samples shows that growth of NS on the surface of porous silicon is more widespread in contrast to the polished Si. The results of X-Ray spectral microanalysis showed that the carbon content in samples of nanostructures on polished Si varies from 10 to 20% and remains constant on porous silicon ~ 25%. The results of studies by Raman scattering confirmed that SiC film with structure of 3C-SiC is formed on the polished Si. Besides, the presence of main carbon peaks on both types of substrates in the range of 1338.2 and 1583 cm‒1 should be noted, which correspond to the carbon nanostructures.

Highlights

Nanostructures – silicon carbide nanotubes and nanofibers are promising targets for the creation of new materials
The obtained samples were studied by the method of scanning electron microscopy (SEM), which was carried out at the Institute of Materials Science of the University of Siegen
Studies by the method of scanning electron microscopy have shown that the formed nanostructures have a diameter of 200‒350 nm and a rough surface

Summary

Introduction

Nanostructures – silicon carbide nanotubes and nanofibers are promising targets for the creation of new materials. One-dimensional (1D) semiconductor nanostructures (fibers, tubes) have become the goal of intensive research, thanks to their unique applications in the production of electronic, optoelectronic and sensor devices on a nanometer scale. Because of their potential use in nanodevices, 1D semiconductor nanomaterials were selected as one of the top 10 for technology in the Technical Review of the Massachusetts Institute of Technology in 2003 [2]. In addition to the traditional use as components of ceramics and construction materials SiC whiskers are of interest for the development of new components of high-temperature electronic devices [1]. Advantages of using SiC in this area are associated with its high thermal and corrosion resistance, combined with the large value of the forbidden zone (2.4‒3.3 eV, depending on the polytype of silicon carbide) [1]

Methods

Results

Conclusion