Abstract
PH-sensitivity, stability and drift of semiconductors structures with various quality and type of surface dielectric layer have been investigated. Their parameters for creation of pH-sensitive field effect transistors were optimised. The best results were obtained for two-layer structure of dielectric that consists of SiO2 and Si3 N4 . These structures were proposed for development of pHsensitive field effect transistors. The best characteristics were shown by transducers created at R&D Institute “Microdevice” (Kiev, Ukraine).
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