Abstract
AbstractThis paper reviews work carried out in‐situ on semiconductor devices by means of a high voltage electron microscope equipped with facilities for scanning transmission electron microscopy, electron beam induced conductivity and energy loss spectrometry. These combined techniques have allowed simultaneous and unambiguous correlations to be established between crystallographic, electrical and elemental properties of semiconductor materials and devices. Examples of these correlations are given, and mention is made to facilities (scanning deep level transient spectroscopy and cathodoluminescence) which may further increase the potential of high voltage scanning transmission electron microscopy.
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