Abstract
In this paper, we investigated the photoluminescence property of ZnO films which were irradiated by KrFexcimer laser. Through the analysis of photoluminescence and UV-VIS spectra, it is shown that the red shift of band gap forthe irradiated sample. Room temperature UV photoluminescence of ZnO film is composed of contribution from the FX, the neutral donor bound exciton (D0X) emission and the longitudinal optical (LO) phonon replicas of the bound exciton transition (D0X-1LO). The visible emission band is ascribed toVO+, VZn-, Oiand Vo++. It shows that KrF laser irradiation could effectively modulate the exciton emission, which is important for the application of high performance of emitting optoelectronic devices.
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