Abstract
Undoped and vanadium carbide (VC) doped 3C-SiC powders have been prepared, and an in-depth study is performed on the VC-doping dependence of room temperature ferromagnetism (FM). It is demonstrated that the FM originates in vacancy defects. The saturation magnetization (Ms) of VC is about 800 times than that of undoped 3C-SiC, while the Ms of VC-doped 3C-SiC is even smaller than that of the undoped one. The increase of doping concentration would result in the decrease of vacancy concentration and the increase of carrier concentration, suggesting that the FM of 3C-SiC is related to both vacancy and carrier concentrations.
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