Abstract
The role of controlled Fe antisite disorder in the narrow gap semiconductor FeGa_33 has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations from occupation numbers of Fe and Ga sites expected in the pristine compound were obtained from X-ray data using Rietveld refinement analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa_33 from paramagnetic semiconductor to a magnetic metal. These findings are discussed inside the framework of Anderson localization in the vicinity of metal-semiconductor transitions and spin fluctuations.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
