Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application

Abstract

In this letter, we have examined the gradual and abrupt resistive switching (RS) dynamics in E-beam evaporated P-type Tin-oxide based cross-cell memristor by adjusting the DC voltage sweep, and it has been used for synaptic and memory application, respectively. We have observed gradual RS dynamics at low DC sweeping voltage (+0.5 V/-0.5 V) and we have also studied its synaptic behavior (Potentiation/Depression) at different read voltage and pulse widths to optimize its synaptic performance. As well as we have also observed abrupt RS dynamics at high DC sweeping voltage (+1.5 V/-1.5 V) and utilized it as a memory element. The proposed device shows a good Switching window (∼102) up to 20 K times read/write operation without any considerable degradation at an optimized read voltage (0.5 V) and we have also studied data retention property for 105 sec at 85 °C.