Abstract
The reduction in the etch rate of isolated holes in SiOCH was investigated as functions of deposition condition of SiOCH, cap-layer presence, air-exposure time between lithography and etching, and degassing time between cap-layer etching and SiOCH etching. The amount of H 2O in the films was evaluated using thermal-desorption spectroscopy (TDS). We conclude that the H 2O adsorbed in SiOCH reduces the etch rate, and its degassing results in recovery of etch-rate reduction. Using the SiOCH film that can avoid the damage due to cap-layer deposition, the reduction in etch rate was restricted during two months of air exposure.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
