Abstract
Recombination processes in GaAsN, GaInASN, and GaAsSbN compounds have been analysed and compared. The following properties like: broad photoluminescence band at energy of ∼ 0.85 eV, an emission band aproximately 80 meV below band gap energy, and annealing-induced blue shift of the energy gap have been found for all three compounds. In order to explain these features a simple band gap diagram with N defect-related levels close to conduction band edge and fluctuations in the energy of the conduction band minimum has been proposed.
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