Abstract
We fabricated industrial passivated emitter and rear cell (i-PERC) solar cells by upgrading a conventional solar cell process for a commercial grade 6 inch p-type wafer. The complex fabrication process of the rear side opening to form the local back surface field (LBSF) limits mass production of PERC solar cells, therefore, we focused on the selective ablation of rear side passivation layer using laser and laser-induced damage etching. Optical microscope and electroluminescence (EL) images reveal that the damage etching after laser ablation improved its surface quality, and the shunt resistance (Rsh) was also increased by optimizing the damage etching. We obtained 19.73% conversion efficiency on i-PERC solar cells.
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