Abstract
A rear-emitter (rear-junction) n -on- p + device design was investigated for use in metamorphic monolithic III–V/Si tandem solar cells as an alternative to the traditional front-emitter (front-junction) n +-on- p design for potentially greater resistance to threading dislocation-induced performance degradation. A comparison of MOCVD-grown rear- versus front-emitter 1.7-eV bandgap GaAs0.75P0.25 top cell isotypes demonstrated as 30-mV advantage in W OC for the rear-emitter design. This reduction in W OC was determined to be nearly equally caused by a reduction in junction recombination current as well as reduced reverse saturation current from improved quasi-neutral region transport. These results suggest that the rear-emitter design may indeed be a promising pathway for application to metamorphic cells, including III–V/Si tandems, where achieving maximum voltage output is often hindered by elevated dislocation densities. However, further optimization of short-circuit current collection is needed to overcome suboptimal collection probability profiles that could limit the efficacy of such structures.
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