Abstract
Indium tin oxide films were deposited on acrylics by reactive magnetron sputtering at a low substrate temperature for their application to pilot windows. The effects of oxygen flow on the microstructure and chemical composition of films were explored. The deposition rate of ITO films invariably increased with the cathode current and decreased with the bias voltage. In addition, it initially decreased significantly with increasing oxygen flow rate but this decrease slowed down as the oxygen flow rate exceeded a certain critical value. The composition of ITO films is considerably different from the stoichiometric composition. However the O/(In+Sn) ratio approached the stoichiometric composition with the increase in the oxygen flow rate. No obvious crystalline phases were detected in ITO films at an oxygen flow rate of 1sccm. However crystalline phases were observed as the oxygen flow rate increased. The lattice parameters of ITO films increased with the oxygen flow rate and were greater than that of In2O3. This was attributed to the decrease in oxygen vacancies at high flow rates. Low-energy (110) planes grow preferentially in ITO films with no bias voltage. Non-close-packed preferential planes of (111) predominated, however, as the bias voltage was increased.
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