Investigation of radiative recombination from Mn-related states in Ga1−xMnxAs

Abstract

We show that the incorporation of a Ga1−xMnxAs layer with x=1% in the intrinsic region of a p–i–n diode produces an intense electroluminescence signal due to electronic transitions that involve holes bound to Mn-related states. The intensity of the electroluminescence signal is weakly affected by the temperature over the range of 5–290 K, thus indicating that the Mn-related hole states act as efficient sites for radiative recombination even at room temperature, despite the strong disorder in the Ga1−xMnxAs at relatively high values of x.