Abstract
Deep level transient spectroscopy (DLTS) and lifetime measurements were carried out on silicon p + nn + diodes before and after irradiation with fast neutrons at room temperature with fluences of 5.5 x 10 11 and 1.0 x 10 12 n/cm 2 . In the non-irradiated samples the observed levels satisfactorily explained the measured data of recombination and generation lifetimes in the frame of the Shock-ley-Hall-Read (SHR) theory. After irradiation the lifetime data showed discrepancies with the parameters of the existing levels, which was explained by the cluster structure of the neutron damage defects.
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