Abstract
The response to single-event transient of decananometer SOI MOSFETs is investigated by heavy ion experiment and by 3D quantum simulation. The 50 nm FD Single-Gate SOI devices have been irradiated with heavy ions at GANIL (Caen, France) using a new experimental setup. Three-dimensional numerical simulation is used to get further insights and to extrapolate the experimental results when devices are scaled down. For ultra-thin films new phenomena such as quantum-mechanical confinement have to be carefully considered in the device simulation. These effects are found to have an increasing impact on the operation of future ultra-thin single- and double-gate devices submitted to heavy ion irradiation
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