Abstract
The emission angular distributions, the transverse momentum distributions and the temperature parameters of projectile fragments produced in fragmentation of [Formula: see text]Si on C target at 736[Formula: see text]A[Formula: see text]MeV are measured. It is found that the scattering angle of primary silicon ions is smaller than the emission angle of their fragments. The average value and the width of the angular distribution and the transverse momentum distribution are increased with the decrease of the charge of projectile fragments. The cumulative squared transverse momentum distribution of projectile fragments can be well fitted by a single Rayleigh distribution, which indicates that the projectile fragments are emitted from a single temperature emission source. Most of the temperature parameters of projectile fragments emission source are in the range of 2–5[Formula: see text]MeV, which does not obviously depend on the charge of the projectile fragments.
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