Investigation of power Trench MOSFETs with retrograde body profile

Abstract

We present here a power Trench MOSFET (T-MOS) with retrograde body doping profile. The channel length and trench depth are both shortened compared with conventional T-MOS. High energy implantation is used to form retrograde body profile. Electronic parameters of the new structure have been obtained by process and device simulation. The results show that the new structure has much lower specific on-resistance ( R ds,on) because of its shorter channel when compared with conventional T-MOS. As the trench depth is shallowed, the gate charge density Q g is also reduced.