Abstract
We have investigated the energy transfers in the 1.54- μ m region of (Er,Sc) 2 O 3 epitaxial thin films grown on Si(111). The interplay of the energy transfers between Er ions in the different and the same symmetry sites makes the dynamics complicated. To suppress the energy transfer upconversion, low power and resonant excitation of the third crystal-field level ( 4 I 13 / 2 : Y 3 ′ ) of the Er 3 + site with C 3 i symmetry was employed. The time-resolved photoluminescence measurements of the Y 1 ′ - Z 1 ′ transition indicate the existence of two decay components having fast (10–100 μ s) and slow (0.1–1 ms) relaxation times in the range of 4–60 K. The model calculation including the inter-site energy transfers, the temperature-sensitive and -insensitive non-radiative relaxations fits the experimental results well. Moreover, the long averaged inter-Er 3 + distance obtained by decreasing Er concentration was found to reduce two kinds of non-radiative relaxation rates and the energy transfer rates between Er ions very effectively.
Highlights
There has been a great deal of interest in the subject of the population manipulation in quantum states, which provoked by the emergence of the quantum information paradigm [1,2]
We investigate the population dynamics in a whole system which consists of the inter- and intra-site energy transfer (ET) but the non-radiative relaxation in Er2 O3 and (Er, Sc)2 O3 single crystals grown on Si(111)
The UC process brings a severe reduction in the population of the target energy level, and it makes the population dynamics in the considered system complicated
Summary
There has been a great deal of interest in the subject of the population (and coherence) manipulation in quantum states, which provoked by the emergence of the quantum information paradigm [1,2]. In our previous study [17], we investigated the ETs in the Er2 O3 single crystal under the resonant excitation of a Stark level (Y2 ) in a C2 site and estimated the large inter-site ET rate (∼0.5 μs−1 ). Intra-site ET rate (∼0.1 μs−1 ) via the excitation power dependence of the time-integrated photoluminescence (TI-PL) intensities, where the non-radiative relaxation and UC process were not explicitly taken into account. We investigate the population dynamics in a whole system which consists of the inter- and intra-site ETs but the non-radiative relaxation in Er2 O3 and (Er, Sc) O3 single crystals grown on Si(111). The simple model requires the temperature sensitive and insensitive non-radiative relaxations to reproduce the TR-PL signals and their temperature dependence well
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