Abstract
Abstract Continuing our preceding work, three different technological aspects of the use of polysilicon for temperature sensor applications have been studied. First, the reproducibility of the polysilicon process itself has been investigated. Hence a statistical analysis of the resistance scatter within wafers is presented. Secondly, the temperature behaviour of polysilicon resistors as a function of poly-Si deposition temperature is shown. Finally thermistors made of thin polysilicon layers (dSi ≈ 100 nm) have been fabricated, and the resistance scatter measured.
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