Investigation of polycrystalline silicon deposition on glass substrates

Abstract

Borosilicate glass has been chosen as substrate for solution growth of silicon due to its potential role as the superstrate of a solar module. Several approaches has been used to deposit polycrystalline silicon layer from solution on to glass substrates, namely, silicon particle seeded growth, growth on α-silicon coated glass substrates and growth on bare glass from the solutions containing Al or Mg. Large grain polycrystalline silicon crystals have been grown on glass substrates previously seeded by silicon particles. Continuous silicon thin films have been deposited onto α-silicon coated glass substrates. For the third approach, impinging growth of silicon layers has been obtained on sandblasted glass substrates from solutions containing Al and Mg at temperatures below 600°C, if the concentration of Al and Mg in the solution and the contact time between the solution and the substrate are appropriately adjusted. Large grain continuous silicon thin films with an area of 10 cm 2 have also been groown on glass substrates at temperatures around the softening points of the glass.