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Abstract
Si−O−C(−H) ceramics with reduced carbon contents were prepared by pyrolyzing polysiloxane particles in hydrogen at temperatures of 750, 800 and 850 °C. Under HeCd laser irradiation (325 nm), the obtained ceramics show broad spectra peaking at 400–415 nm. On the other hand, the excitation on the higher energy region by an ArF excimer laser (193 nm) induces new PL bands located at short wavelength region of 300 and 355 nm. Such high energy PL bands appear prominently in the ceramics synthesized at 750 °C, and are minor in ceramics synthesized at 800 and 850 °C.
Highlights
Silicon oxycarbide (Si−O−C)(−H) ceramics with reduced carbon contents were prepared by pyrolyzing polysiloxane particles in hydrogen at temperatures of 750, 800 and 850 ◦C
Such high energy PL bands appear prominently in the ceramics synthesized at 750 ◦C, and are minor in ceramics synthesized at 800 and 850 ◦C
It is becoming apparent that such white Si−O−C ceramics exhibit photoluminescence (PL) at the visible wavelength region under excitation by UV light
Summary
The excitation on the higher energy region by an ArF excimer laser (193 nm) induces new PL bands located at short wavelength region of 300 and 355 nm. Existences of Si−O−Si stretching (1050 cm−1), Si−O−Si bending (800 cm−1) and Si−O−Si rocking (450 cm−1) are apparently shown in the spectra.[19] In addition to these broad absorption bands, the S750 spectrum has a small sharp peak assigned to Si−CH3 deformation at 1250 cm−1. Intensity of this peak decreases as the decarbonization temperature increases.
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