Abstract
Photoemission of polarized electrons from heterostructures based on GaAs/AlInGaAs superstructures with minimum discontinuities of the conduction band edge and on AlGaAs/AlInGaAs superstructures with stressed quantum wells is investigated. A comparison of the experimental dependences of photoemission polarization on the excitation energy with the calculated dependences allows the polarization losses to be estimated in different photoemission stages. Record values of the polarization degree are reported.
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