Abstract
In this study, ZnO nanoporous layers have been deposited on Glass/Mo/Cu(In,Ga)Se2 substrate via nitrate ions reduction in presence of thiourea. The photoelectrochemical behavior of p-type semi-conductor Copper Indium Gallium Diselenide (CIGSe) has been studied in acidic medium for different pH values and different light intensities. Then, the effect of thiourea concentration between 0 and 1.0 M on the nitrate reduction in presence of zinc ion has been investigated by cyclic voltammetry in order to find the optimal potential for photoelectrodeposition. Results show that thiourea impacts the resulting photocurrent and the potential of the nitrates reduction. The photoelectrodeposited films have been characterized by Scanning Electron Microscopy, X-Ray Diffraction and X-Ray Photoelectron Spectroscopy. These analyses highlight that thiourea addition causes a change in film morphology, which is composed of well-crystallized ZnO with no sulfur incorporation. Moreover, thiourea seems to be an interesting additive to obtain nanoporous ZnO films on CIGSe.
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