Investigation of parasitic capacitances of In2O5Sn gate electrode recessed channel MOSFET for ULSI switching applications

Abstract

This work discusses the capacitance–voltage (C–V) analysis and frequency dependent capacitance of In2O5Sn (Tin Oxide) gate electrode Recessed Channel (TGRC) MOSFET with an aim to examine the effectiveness of In2O5Sn (Transparent) as a gate material on parasitic capacitance which prominently influences the current driving capability and thus, the switching performance. Moreover, capacitance dependent parameters such as Transconductance Frequency Product (TFP), Energy Delay Product (EDP) and Gain Bandwidth Product (GBP) are also assessed and found that, TFP increases to 6.33 times in comparison to metal gate RC MOSFET owing to a noticeable reduction in parasitic capacitance (Cgg = Cgs + Cgd), due to which EDP and GBP also improve considerably and thus reflects its effectiveness in RF amplifiers and receivers. In addition, the effect of parameter variation such as gate length (Lg) and negative junction depth (NJD) of TGRC is also observed, and results reveal that with Lg = 20 nm and NJD = 5 nm, TGRC unveils outstanding switching performance which is desirable for low power ULSI applications.