Abstract

ZnO films prepared at different temperatures and annealed at 900°C inoxygen are studied by photoluminescence (PL) and x-ray photoelectronspectroscopy (XPS). It is observed that in the PL of the as-grown filmsthe green luminescence (GL) and the yellow luminescence (YL) arerelated, and after annealing the GL is restrained and the YL isenhanced. The O 1s XPS results also show the coexistence ofoxygen vacancy (VO) and interstitial oxygen (Oi)before annealing and the quenching of the VO afterannealing. By combining the two results it is deduced that the GL andYL are related to the VO and Oi defects,respectively.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.