Abstract
In this paper, the oxide trapped charge density (N OT ) and interface trapped charge density (N IT ) on the threshold voltage shift with the total dose under gamma irradiation of NMOSFET are investigated. The subthreshold technique (mV/dec) is used to separate the irradiation induced threshold voltage shifts into voltage shifts due to the interface trapped charge. The linear extrapolation method is used to extract the threshold voltage from $I_{DS}-V_{GS}$ curve at low V DS of typically 100 mV. The results showed that the threshold voltage was shifted from 0.69 V to 0.45 V, the threshold swing was increased from 95 to 107 mV/dec, the oxide charge and interface charge density were found to be increase almost by 1 order in magnitude for a total gamma dose of 10 kGy.
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