Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures

Burcu Avci,Ali Akbar Hussaini,Murat Yildirim,Mehmet Okan Erdal

doi:10.35238/sufefd.999508

Abstract

Recently, interfacial layer such as metal oxide, insulator and polymer have been used by scientists between the metal and semiconductor to increase the stability of the metal-semiconductor heterojunctions. These materials have been varied according to their usage aims. In this study, graphene nanoribbons (GNR) and 7,7,8,8 Tetracyanoquinodimethane (TCNQ, C12H4N4) layer has been used as interfacial layer between the metal and semiconductor for photodiode applications. The TCNQ layer collects and extracts more electrons in the interface of the device and is used as electron acceptor material for organic solar cells. Herein, we fabricated Al/p-Si/Al, Al/p-Si/TCNQ/Al and Al/p-Si/TCNQ:GNR/Al heterojunctions by physical vapor deposition technique. I-V measurements has been employed under dark and various light illumination conditions to show dielectric properties of the fabricated heterojunctions. From current-voltage characteristics, we calculated the electronic parameters such as ideality factor, barrier heights, series resistances and rise times. It can be concluded from overall results that TCNQ and TCNQ:GNR layers had a major impact on quality and can be considered as quite proper materials for optoelectronic applications.

Highlights

Metal-Semiconductor (MS) contacts are called Schotkky diodes after its inventor W
Schottky barrier diodes (SBDs) are metal– semiconductor (MS) contacts that are extensively used in semiconductor manufacturing (Berk et al, 2021), temperature-sensing (Zeghdar et al, 2020) and solar cells applications (Ramadan & Martín-Palma, 2020)
Electrical characteristics of the fabricated photodiodes I-V characteristics of the Al/p-Si/Al, Al/pSi/TCNQ/Al and Al/p-Si/TCNQ:graphene nanoribbons (GNR)/Al heterostructures have been shown in Fig. 2 under various light power intensities

Summary

Introduction

Metal-Semiconductor (MS) contacts are called Schotkky diodes after its inventor W. Schottky barrier diodes (SBDs) are metal– semiconductor (MS) contacts that are extensively used in semiconductor manufacturing (Berk et al, 2021), temperature-sensing (Zeghdar et al, 2020) and solar cells applications (Ramadan & Martín-Palma, 2020). Metal-semiconductor heterojunctions have a wide range of usages in solar cells, rectifiers, capacitors, photodetectors and transistors fabrications (Munikrishana Reddy et al, 2013). Schottky diodes have very high switching speed and temperature stability compared to p-n junction diode (Kyoung et al, 2016). If the interface layer thickness (di) between metal and semiconductor increases above a few hundred Angstroms (Å), these structures are termed as metal/insulatoroxide-polymer/semiconductor (MIS, MOS, MPS) diodes rather than Schottky diodes (Gökçen et al, 2012; Yücedag et al, 2014). Polymer interface materials have been used to increase the properties of these devices (Srivastava & Chakrabarti, 2015; Tozlu & Mutlu, 2016)

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Conclusion