Abstract
We report a detailed numerical analysis of the optoelectronic characteristics of the indium composition on the device performance. The analysis includes discussion of the band-bending, built-in field, carrier confinement and emission spectra. The quantum well tilts strongly with increasing composition of indium. In addition, as the indium concentration increases in the active region, the spontaneous emission decreases and its full width at half maximum increases gradually.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have